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Part Number Overview
Manufacturer Part Number
APT6017B2LLG
Description
MOSFET N-CH 600V 35A T-MAX
Detailed Description
N-Channel 600 V 35A (Tc) 500W (Tc) Through Hole T-MAX™ [B2]
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
POWER MOS 7®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™ [B2]
Package / Case
TO-247-3 Variant
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
150-APT6017B2LLG
APT6017B2LLG-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT6017B2LLG
Documents & Media
Environmental Information
()
Quantity Price
-
Substitutes
-