China
Spain
Rusia
Italy
Germany2SC5763M
Part Number Overview
Manufacturer Part Number
2SC5763M
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 400 V 7 A 17MHz 1.75 W Through Hole TO-220AB
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
452
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
7 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
800mV @ 800mA, 4A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 800mA, 5V
Power - Max
1.75 W
Frequency - Transition
17MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SC5763M
ONSONS2SC5763M
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC5763M
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 452
Unit Price: $0.66
Packaging: Bulk
MinMultiplier: 452
Packaging: Bulk
MinMultiplier: 452
Substitutes
-