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Part Number Overview
Manufacturer Part Number
SPI07N65C3XKSA1
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 650 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO262-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
335
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-SPI07N65C3XKSA1
INFINFSPI07N65C3XKSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPI07N65C3XKSA1
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 335
Unit Price: $0.9
Packaging: Bulk
MinMultiplier: 335
Packaging: Bulk
MinMultiplier: 335
Substitutes
-