China
Spain
Rusia
Italy
GermanyIXTQ32P20T
Part Number Overview
Manufacturer Part Number
IXTQ32P20T
Description
MOSFET P-CH 200V 32A TO3P
Detailed Description
P-Channel 200 V 32A (Tc) 300W (Tc) Through Hole TO-3P
Manufacturer
IXYS
Standard LeadTime
57 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
TrenchP™
Package
Tube
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
14500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ32
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTQ32P20T
Documents & Media
Datasheets
1(IXTx32P20T)
Environmental Information
1(Ixys IC REACH)
PCN Design/Specification
1(Multiple Devices Material 23/Jun/2020)
Quantity Price
Quantity: 300
Unit Price: $4.57167
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
Substitutes
-