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IXTH32N65X
Part Number Overview
Manufacturer Part Number
IXTH32N65X
Description
MOSFET N-CH 650V 32A TO247
Detailed Description
N-Channel 650 V 32A (Tc) 500W (Tc) Through Hole TO-247 (IXTH)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
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Technical specifications
Mfr
IXYS
Series
Ultra X
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
135mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2205 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXTH32
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTH32N65X
Documents & Media
Datasheets
1(IXTx32N65X)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXTx32N65X)
Quantity Price
Quantity: 30
Unit Price: $6.343
Packaging: Tube
MinMultiplier: 30
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