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SIA418DJ-T1-GE3
Part Number Overview
Manufacturer Part Number
SIA418DJ-T1-GE3
Description
MOSFET N-CH 30V 12A PPAK SC70-6
Detailed Description
N-Channel 30 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
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Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA418
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIA418DJT1GE3
SIA418DJ-T1-GE3DKR
SIA418DJ-T1-GE3CT
SIA418DJ-T1-GE3TR
2266-SIA418DJ-T1-GE3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA418DJ-T1-GE3
Documents & Media
Datasheets
1(SIA418DJ)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIA418DJ)
Quantity Price
-
Substitutes
Part No. : SIA462DJ-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 2
Unit Price. : $0.40000
Substitute Type. : Direct
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