China
Spain
Rusia
Italy
Germany2SK1292(02)-S6-AZ
Part Number Overview
Manufacturer Part Number
2SK1292(02)-S6-AZ
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 100 V 20A (Ta) 2W (Ta), 35W (Tc) Through Hole MP-45F
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
80
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
80mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 35W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
MP-45F
Package / Case
TO-220-3 Isolated Tab
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SK1292(02)-S6-AZ
RENRNS2SK1292(02)-S6-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation 2SK1292(02)-S6-AZ
Documents & Media
-
Quantity Price
Quantity: 80
Unit Price: $3.78
Packaging: Bulk
MinMultiplier: 80
Packaging: Bulk
MinMultiplier: 80
Substitutes
-