Last updates
20260409
Language
English
China
Spain
Rusia
Italy
Germany
Electronic News
Stock Inquiry Online
2SC3585-T1B-A
Part Number Overview
Manufacturer Part Number
2SC3585-T1B-A
Description
NPN TRANSISTOR
Detailed Description
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT23-3 (TO-236)
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
833
Supplier Stocks
>>>Click to Check<<<
Want to know more about 2SC3585-T1B-A ?
Innovo Technology will serve you professionally
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
10V
Frequency - Transition
10GHz
Noise Figure (dB Typ @ f)
1.8dB @ 2GHz
Gain
9dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 6V
Current - Collector (Ic) (Max)
35mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT23-3 (TO-236)
Environmental & Export Classifications
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RENRNS2SC3585-T1B-A
2156-2SC3585-T1B-A-RETR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Renesas Electronics Corporation 2SC3585-T1B-A
Documents & Media
Datasheets
1(2SC3585)
Quantity Price
Quantity: 833
Unit Price: $0.36
Packaging: Bulk
MinMultiplier: 833
Substitutes
-
Similar Products
3065-E-256-S
SG-8018CA 2.1000M-TJHSA0
FC5-24-10Y
8N3QV01LG-1107CDI
RCS0603100RJNEA