China
Spain
Rusia
Italy
GermanySPU18P06P
Part Number Overview
Manufacturer Part Number
SPU18P06P
Description
MOSFET P-CH 60V 18.6A TO251-3
Detailed Description
P-Channel 60 V 18.6A (Tc) Through Hole PG-TO251-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
SPU18P
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-SPU18P06P-IT
INFINFSPU18P06P
SPU18P06PIN
SPU18P06PXK
SPU18P06PX
SP000012303
SPU18P06P-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPU18P06P
Documents & Media
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Quantity Price
-
Substitutes
-