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Part Number Overview
Manufacturer Part Number
FQB65N06TM
Description
MOSFET N-CH 60V 65A D2PAK
Detailed Description
N-Channel 60 V 65A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
314
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2410 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFQB65N06TM
2156-FQB65N06TM-FSTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB65N06TM
Documents & Media
Datasheets
1(FQB65N06TM)
Quantity Price
Quantity: 314
Unit Price: $0.96
Packaging: Bulk
MinMultiplier: 314
Packaging: Bulk
MinMultiplier: 314
Substitutes
-