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Part Number Overview
Manufacturer Part Number
BSC027N03S G
Description
MOSFET N-CH 30V 25A/100A TDSON
Detailed Description
N-Channel 30 V 25A (Ta), 100A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6540 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000095462
BSC027N03SG
BSC027N03S G-ND
BSC027N03SGXT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC027N03S G
Documents & Media
Datasheets
1(BSC027N03S G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSC027N03S G)
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