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Part Number Overview
Manufacturer Part Number
2SD1347T-AE
Description
NPN EPITAXIAL PLANAR SILICON
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 3 A 150MHz 1 W Through Hole 3-MP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
683
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Power - Max
1 W
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SD1347T-AE
ONSONS2SD1347T-AE
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1347T-AE
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 683
Unit Price: $0.44
Packaging: Bulk
MinMultiplier: 683
Packaging: Bulk
MinMultiplier: 683
Substitutes
-