China
Spain
Rusia
Italy
GermanyBC56-10PAS115
Part Number Overview
Manufacturer Part Number
BC56-10PAS115
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 1 A 180MHz 420 mW Surface Mount DFN2020D-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
4,768
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
420 mW
Frequency - Transition
180MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Supplier Device Package
DFN2020D-3
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-BC56-10PAS115
NEXNXPBC56-10PAS115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC56-10PAS115
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
-
Substitutes
-