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Part Number Overview
Manufacturer Part Number
FQB2N80TM
Description
MOSFET N-CH 800V 2.4A D2PAK
Detailed Description
N-Channel 800 V 2.4A (Tc) 3.13W (Ta), 85W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQB2N80TM Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB2
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB2N80TM
Documents & Media
Datasheets
1(FQB2N80, FQI2N80)
Environmental Information
()
HTML Datasheet
1(FQB2N80, FQI2N80)
EDA Models
1(FQB2N80TM Models)
Quantity Price
-
Substitutes
Part No. : IRF540NSTRLPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 18,998
Unit Price. : $1.50000
Substitute Type. : Similar
Quantity Available. : 18,998
Unit Price. : $1.50000
Substitute Type. : Similar