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Part Number Overview
Manufacturer Part Number
PUMB10,115
Description
NOW NEXPERIA PUMB10 - SMALL SIGN
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount SOT-363
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
15,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA
Frequency - Transition
180MHz
Power - Max
300mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Base Product Number
PUMB10
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPPUMB10,115
2156-PUMB10,115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/NXP USA Inc. PUMB10,115
Documents & Media
Datasheets
1(PUMB10,115 Datasheet)
Quantity Price
Quantity: 15000
Unit Price: $0.02
Packaging: Bulk
MinMultiplier: 15000
Packaging: Bulk
MinMultiplier: 15000
Substitutes
-