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Part Number Overview
Manufacturer Part Number
APT94N65B2C3G
Description
MOSFET N-CH 650V 94A T-MAX
Detailed Description
N-Channel 650 V 94A (Tc) 833W (Tc) Through Hole T-MAX™ [B2]
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
CoolMOS™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
35mOhm @ 47A, 10V
Vgs(th) (Max) @ Id
3.9V @ 5.8mA
Gate Charge (Qg) (Max) @ Vgs
580 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13940 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
833W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™ [B2]
Package / Case
TO-247-3 Variant
Base Product Number
APT94N65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
150-APT94N65B2C3G
APT94N65B2C3G-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT94N65B2C3G
Documents & Media
Environmental Information
()
Quantity Price
-
Substitutes
-