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Part Number Overview
Manufacturer Part Number
TSM088NA03CR RLG
Description
MOSFET N-CH 30V 61A 8PDFN
Detailed Description
N-Channel 30 V 61A (Tc) 56W (Tc) Surface Mount 8-PDFN (5x6)
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5x6)
Package / Case
8-PowerTDFN
Base Product Number
TSM088
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TSM088NA03CR RLGDKR-ND
TSM088NA03CRRLGDKR
TSM088NA03CR RLGCT-ND
TSM088NA03CR RLGDKR
TSM088NA03CR RLGTR
TSM088NA03CRRLGTR
TSM088NA03CRRLGCT
TSM088NA03CR RLGTR-ND
TSM088NA03CR RLGCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM088NA03CR RLG
Documents & Media
Datasheets
1(TSM088NA03CR)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)
HTML Datasheet
1(TSM088NA03CR)
Quantity Price
-
Substitutes
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Manufacturer. : Diodes Incorporated
Quantity Available. : 0
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Manufacturer. : Diodes Incorporated
Quantity Available. : 18,883
Unit Price. : $0.85000
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Quantity Available. : 18,883
Unit Price. : $0.85000
Substitute Type. : Similar