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Part Number Overview
Manufacturer Part Number
PMPB29XNE,115
Description
MOSFET N-CH 30V 5A DFN2020MD-6
Detailed Description
N-Channel 30 V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN1010B-6
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
3,184
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
33mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.6 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta), 12.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1010B-6
Package / Case
6-XFDFN Exposed Pad
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-PMPB29XNE,115
NEXNXPPMPB29XNE,115
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMPB29XNE,115
Documents & Media
Datasheets
1(PMPB29xNE,115 Datasheet)
Quantity Price
Quantity: 3184
Unit Price: $0.09
Packaging: Bulk
MinMultiplier: 3184
Packaging: Bulk
MinMultiplier: 3184
Substitutes
-