China
Spain
Rusia
Italy
GermanyF1T7GHA0G
Part Number Overview
Manufacturer Part Number
F1T7GHA0G
Description
DIODE GEN PURP 1A TS-1
Detailed Description
Diode 1000 V 1A Through Hole TS-1
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Box (TB)
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1000 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.3 V @ 1 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
500 ns
Current - Reverse Leakage @ Vr
5 µA @ 1000 V
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Package / Case
T-18, Axial
Supplier Device Package
TS-1
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
F1T7
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Taiwan Semiconductor Corporation F1T7GHA0G
Documents & Media
Datasheets
1(F1T1G - F1T7G)
Environmental Information
()
Quantity Price
-
Substitutes
-