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Part Number Overview
Manufacturer Part Number
SIHF35N60EF-GE3
Description
MOSFET N-CH 600V 32A TO220
Detailed Description
N-Channel 600 V 32A (Tc) 39W (Tc) Through Hole TO-220 Full Pack
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
EF
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
134 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2568 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHF35
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHF35N60EF-GE3TR-ND
SIHF35N60EF-GE3CTINACTIVE
SIHF35N60EF-GE3TR
SIHF35N60EF-GE3DKR-ND
SIHF35N60EF-GE3CT
SIHF35N60EF-GE3DKRINACTIVE
SIHF35N60EF-GE3CT-ND
SIHF35N60EF-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHF35N60EF-GE3
Documents & Media
Datasheets
1(SIHF35N60EF)
HTML Datasheet
1(SIHF35N60EF)
Quantity Price
Quantity: 1000
Unit Price: $3.13685
Packaging: Bulk
MinMultiplier: 1000
Packaging: Bulk
MinMultiplier: 1000
Substitutes
-