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IRFH7932TR2PBF
Part Number Overview
Manufacturer Part Number
IRFH7932TR2PBF
Description
MOSFET N-CH 30V 24A PQFN56
Detailed Description
N-Channel 30 V 24A (Ta), 104A (Tc) 3.4W (Ta) Surface Mount PQFN (5x6) Single Die
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
400
Supplier Stocks
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Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs
3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
4270 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6) Single Die
Package / Case
8-PowerVDFN
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRFH7932TR2PBFCT
SP001566834
IRFH7932TR2PBFTR
IRFH7932TR2PBFDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH7932TR2PBF
Documents & Media
Datasheets
1(IRFH7932PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFH7932PBF)
Simulation Models
1(IRFH7932TR2PBF Saber Model)
Quantity Price
-
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