China
Spain
Rusia
Italy
GermanyIPD50R650CEATMA1
Part Number Overview
Manufacturer Part Number
IPD50R650CEATMA1
Description
MOSFET N-CH 500V 6.1A TO252-3
Detailed Description
N-Channel 500 V 6.1A (Tc) 69W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
342 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD50R650CEATMA1DKR
IPD50R650CEATMA1CT
IPD50R650CEATMA1-ND
SP001117708
IPD50R650CEATMA1TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50R650CEATMA1
Documents & Media
Datasheets
1(IPD50R650CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD50R650CE)
Quantity Price
-
Substitutes
Part No. : IPD50R650CEAUMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 1,584
Unit Price. : $0.87000
Substitute Type. : Direct
Quantity Available. : 1,584
Unit Price. : $0.87000
Substitute Type. : Direct