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Part Number Overview
Manufacturer Part Number
RN1706JE(TE85L,F)
Description
TRANS 2NPN PREBIAS 0.1W ESV
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
RN1706JE(TE85L,F) Models
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Cut Tape (CT)
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
ESV
Base Product Number
RN1706
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN1706JE(TE85LF)DKR
RN1706JE(TE85LF)CT
RN1706JE(TE85LF)TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN1706JE(TE85L,F)
Documents & Media
Datasheets
1(RN1701JE-06JE)
EDA Models
1(RN1706JE(TE85L,F) Models)
Quantity Price
-
Substitutes
-