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Part Number Overview
Manufacturer Part Number
STW8NB100
Description
MOSFET N-CH 1000V 7.3A TO247-3
Detailed Description
N-Channel 1000 V 7.3A (Tc) 190W (Tc) Through Hole TO-247-3
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
PowerMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.45Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW8N
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW8NB100
Documents & Media
Datasheets
1(STW8NB100)
HTML Datasheet
1(STW8NB100)
Quantity Price
-
Substitutes
-