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JAN2N3507
Part Number Overview
Manufacturer Part Number
JAN2N3507
Description
TRANS NPN 50V 3A TO39
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 3 A 1 W Through Hole TO-39 (TO-205AD)
Manufacturer
Microchip Technology
Standard LeadTime
40 Weeks
Edacad Model
Standard Package
1
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Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1.5A, 2V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/349
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39 (TO-205AD)
Base Product Number
2N3507
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1086-20847-MIL
1086-20847
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JAN2N3507
Documents & Media
Datasheets
1(2N3506 - 2N3507A)
Environmental Information
()
PCN Assembly/Origin
1(Manufacturing Change 23/Feb/2021)
HTML Datasheet
1(2N3506 - 2N3507A)
Quantity Price
Quantity: 100
Unit Price: $12.0101
Packaging: Bulk
MinMultiplier: 100
Substitutes
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