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Part Number Overview
Manufacturer Part Number
FQD4P25TF
Description
MOSFET P-CH 250V 3.1A DPAK
Detailed Description
P-Channel 250 V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQD4P25TF Models
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
-
Base Product Number
FQD4
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
Q1585607A
FQD4P25TF-NDR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD4P25TF
Documents & Media
Datasheets
1(FQD4P25, FQU4P25)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQD4P25, FQU4P25)
EDA Models
1(FQD4P25TF Models)
Quantity Price
-
Substitutes
-