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Part Number Overview
Manufacturer Part Number
BC857C/DG/B4235
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 250 mW Surface Mount TO-236AB
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
3,328
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
250 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236AB
Base Product Number
BC857
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-BC857C/DG/B4235
NEXNXPBC857C/DG/B4235
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC857C/DG/B4235
Documents & Media
Datasheets
1(BC856W, BC857W, BC858W)
HTML Datasheet
1(BC856W, BC857W, BC858W)
Quantity Price
-
Substitutes
-