Last updates
20260415
Language
English
China
Spain
Rusia
Italy
Germany
Electronic News
Stock Inquiry Online
2SA1761,F(J
Part Number Overview
Manufacturer Part Number
2SA1761,F(J
Description
TRANS PNP 50V 3A TO92MOD
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 900 mW Through Hole TO-92MOD
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
>>>Click to Check<<<
Want to know more about 2SA1761,F(J ?
Innovo Technology will serve you professionally
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA, 2V
Power - Max
900 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SA1761
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2SA1761F(J
2SA1761FJ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1761,F(J
Documents & Media
Datasheets
1(2SA1761)
Quantity Price
-
Substitutes
Part No. : 2SA2060(TE12L,F)
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 652
Unit Price. : $0.60000
Substitute Type. : Similar
Similar Products
SI5335D-B04596-GM
SQP40AJB-24K
PHP00603E14E3BST1
926382-01-36-I
M55342K08B51E1RTSV