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Part Number Overview
Manufacturer Part Number
FQPF9P25YDTU
Description
MOSFET P-CH 250V 6A TO220F-3
Detailed Description
P-Channel 250 V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
352
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
620mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3 (Y-Forming)
Package / Case
TO-220-3 Full Pack, Formed Leads
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ONSFSCFQPF9P25YDTU
2156-FQPF9P25YDTU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF9P25YDTU
Documents & Media
Datasheets
1(FQPF9P25YDTU Datasheet)
Quantity Price
Quantity: 352
Unit Price: $0.85
Packaging: Bulk
MinMultiplier: 352
Packaging: Bulk
MinMultiplier: 352
Substitutes
-