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Part Number Overview
Manufacturer Part Number
PMV90EN,215
Description
MOSFET N-CH 30V 1.9A TO236AB
Detailed Description
N-Channel 30 V 1.9A (Ta) 310mW (Ta), 2.09W (Tc) Surface Mount SOT-23 (TO-236AB)
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
84mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
132 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
310mW (Ta), 2.09W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23 (TO-236AB)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
PMV9
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
PMV90EN,215-ND
568-10838-2
568-10838-1
934066504215
568-10838-6
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMV90EN,215
Documents & Media
Datasheets
1(PMV90EN)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 25/Dec/2013)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMV90EN)
Quantity Price
-
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