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Part Number Overview
Manufacturer Part Number
RJK2009DPM-00#T0
Description
MOSFET N-CH 200V 40A TO3PFM
Detailed Description
N-Channel 200 V 40A (Ta) 60W (Tc) Through Hole TO-3PFM
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
RJK2009DPM-00#T0 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
36mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
TO-3PFM
Package / Case
TO-220-3 Full Pack
Base Product Number
RJK2009
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK2009DPM-00#T0
Documents & Media
Datasheets
1(RJK2009DPM Datasheet)
Environmental Information
1(RoHS Compliance)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
HTML Datasheet
1(RJK2009DPM Datasheet)
EDA Models
1(RJK2009DPM-00#T0 Models)
Quantity Price
-
Substitutes
-