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Part Number Overview
Manufacturer Part Number
APT6030BN
Description
MOSFET N-CH 600V 23A TO247AD
Detailed Description
N-Channel 600 V 23A (Tc) 360W (Tc) Through Hole TO-247AD
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
POWER MOS IV®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
150-APT6030BN
APT6030BN-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT6030BN
Documents & Media
Datasheets
1(APT5025BN, APT5030BN)
Environmental Information
()
PCN Obsolescence/ EOL
1(Legacy Prod EOL 1/Mar/2017)
HTML Datasheet
1(APT5025BN, APT5030BN)
Quantity Price
-
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