China
Spain
Rusia
Italy
GermanyBUK9E1R8-40E,127
Part Number Overview
Manufacturer Part Number
BUK9E1R8-40E,127
Description
MOSFET N-CH 40V 120A I2PAK
Detailed Description
N-Channel 40 V 120A (Tc) 349W (Tc) Through Hole I2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
16400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
BUK9E1R8
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK9E1R8-40E,127
Documents & Media
Datasheets
1(BUK9E1R8-40E)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BUK9E1R8-40E)
Quantity Price
-
Substitutes
-