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Part Number Overview
Manufacturer Part Number
IRFZ46NLPBF
Description
MOSFET N-CH 55V 53A TO262
Detailed Description
N-Channel 55 V 53A (Tc) 3.8W (Ta), 107W (Tc) Through Hole TO-262
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1696 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 107W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFZ46
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRFZ46NLPBF
*IRFZ46NLPBF
SP001557896
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFZ46NLPBF
Documents & Media
Datasheets
1(IRFZ46NSPbF, IRFZ46NLPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(IRFZ46NSPbF, IRFZ46NLPbF)
Quantity Price
Quantity: 1000
Unit Price: $0.65917
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
Substitutes
Part No. : IRFZ48L
Manufacturer. : Vishay Siliconix
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Direct
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Direct