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Part Number Overview
Manufacturer Part Number
HGTP12N60A4D
Description
INSULATED GATE BIPOLAR TRANSISTO
Detailed Description
IGBT 600 V 54 A 167 W Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
HGTP12N60A4D Models
Standard Package
165
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
54 A
Current - Collector Pulsed (Icm)
96 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Power - Max
167 W
Switching Energy
55µJ (on), 50µJ (off)
Input Type
Standard
Gate Charge
78 nC
Td (on/off) @ 25°C
17ns/96ns
Test Condition
390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)
30 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-HGTP12N60A4D
FAIFSCHGTP12N60A4D
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor HGTP12N60A4D
Documents & Media
Datasheets
1(HGT1S12N60A4DS)
EDA Models
1(HGTP12N60A4D Models)
Quantity Price
Quantity: 165
Unit Price: $1.82
Packaging: Bulk
MinMultiplier: 165
Packaging: Bulk
MinMultiplier: 165
Substitutes
-