China
Spain
Rusia
Italy
GermanyIPI034NE7N3 G
Part Number Overview
Manufacturer Part Number
IPI034NE7N3 G
Description
MOSFET N-CH 75V 100A TO262-3
Detailed Description
N-Channel 75 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8130 pF @ 37.5 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI034N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPI034NE7N3 G-ND
IPI034NE7N3G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI034NE7N3 G
Documents & Media
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Quantity Price
-
Substitutes
Part No. : IRFSL3207ZPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 880
Unit Price. : $3.39000
Substitute Type. : Similar
Quantity Available. : 880
Unit Price. : $3.39000
Substitute Type. : Similar