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Part Number Overview
Manufacturer Part Number
2N5015S
Description
TRANS NPN 1000V 0.2A TO39
Detailed Description
Bipolar (BJT) Transistor NPN 1000 V 200 mA 1 W Through Hole TO-39 (TO-205AD)
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
Military, MIL-PRF-19500/727
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
1000 V
Vce Saturation (Max) @ Ib, Ic
1.8V @ 5mA, 20mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 10V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39 (TO-205AD)
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
150-2N5015S
2N5015S-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation 2N5015S
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 9/Jul/2018)
Quantity Price
-
Substitutes
-