China
Spain
Rusia
Italy
GermanyJANSD2N3636UB/TR
Part Number Overview
Manufacturer Part Number
JANSD2N3636UB/TR
Description
TRANS PNP 175V 1A UB
Detailed Description
Bipolar (BJT) Transistor PNP 175 V 1 A 1.5 W Surface Mount UB
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
175 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 50mA, 10V
Power - Max
1.5 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/357
Mounting Type
Surface Mount
Package / Case
4-SMD, No Lead
Supplier Device Package
UB
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JANSD2N3636UB/TR
Documents & Media
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
Quantity Price
-
Substitutes
-