Last updates
20260410
Language
English
China
Spain
Rusia
Italy
Germany
Electronic News
Stock Inquiry Online
RF1S9630SM
Part Number Overview
Manufacturer Part Number
RF1S9630SM
Description
P-CHANNEL POWER MOSFET
Detailed Description
P-Channel 200 V 6.5A Surface Mount TO-263AB
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
287
Supplier Stocks
>>>Click to Check<<<
Want to know more about RF1S9630SM ?
Innovo Technology will serve you professionally
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
6.5A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
HARHARRF1S9630SM
2156-RF1S9630SM
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S9630SM
Documents & Media
Datasheets
1(RFD3055LESM9A)
Quantity Price
Quantity: 286
Unit Price: $1.05
Packaging: Bulk
MinMultiplier: 286
Substitutes
-
Similar Products
LP3855ESX-2.5/NOPB
AX5PAF1-655.3600T
TSM-115-03-S-SV
R10-E2521-1
7007S55JI8