China
Spain
Rusia
Italy
GermanyNTD5867NL-1G
Part Number Overview
Manufacturer Part Number
NTD5867NL-1G
Description
MOSFET N-CH 60V 20A IPAK
Detailed Description
N-Channel 60 V 20A (Tc) 36W (Tc) Through Hole
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
39mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
675 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
-
Package / Case
-
Base Product Number
NTD58
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NTD5867NL-1G-ND
NTD5867NL-1GOS
NTD5867NL1G
2156-NTD5867NL-1G-ON
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD5867NL-1G
Documents & Media
Datasheets
1(NTD5867NL)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 05/Apr/2014)
HTML Datasheet
1(NTD5867NL)
Quantity Price
-
Substitutes
-