China
Spain
Rusia
Italy
GermanyIXFK32N90P
Part Number Overview
Manufacturer Part Number
IXFK32N90P
Description
MOSFET N-CH 900V 32A TO264AA
Detailed Description
N-Channel 900 V 32A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™, Polar
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
215 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
960W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA
Base Product Number
IXFK32
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFK32N90P
Documents & Media
Datasheets
1(IXFx32N90P)
PCN Obsolescence/ EOL
1(DK OBS NOTICE)
HTML Datasheet
1(IXFx32N90P)
Quantity Price
-
Substitutes
-