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Part Number Overview
Manufacturer Part Number
SIE832DF-T1-GE3
Description
MOSFET N-CH 40V 50A 10POLARPAK
Detailed Description
N-Channel 40 V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3800 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (S)
Package / Case
10-PolarPAK® (S)
Base Product Number
SIE832
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIE832DF-T1-GE3TR
SIE832DF-T1-GE3DKR
SIE832DFT1GE3
SIE832DF-T1-GE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIE832DF-T1-GE3
Documents & Media
Datasheets
1(SIE832DF)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIE832DF)
Quantity Price
-
Substitutes
-