China
Spain
Rusia
Italy
GermanyFDP8440
Part Number Overview
Manufacturer Part Number
FDP8440
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 40 V 100A (Tc) 306W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
120
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
450 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
24740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
306W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFDP8440
2156-FDP8440
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP8440
Documents & Media
Datasheets
1(FDP8440 Datasheet)
Quantity Price
Quantity: 120
Unit Price: $2.51
Packaging: Bulk
MinMultiplier: 120
Packaging: Bulk
MinMultiplier: 120
Substitutes
-