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JAN2N1016B
Part Number Overview
Manufacturer Part Number
JAN2N1016B
Description
TRANS NPN 100V 7.5A TO82
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 7.5 A 150 W TO-82
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
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Technical specifications
Mfr
Microsemi Corporation
Series
Military, MIL-PRF-19500/102
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
7.5 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 1A, 5A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 2A, 4V
Power - Max
150 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Supplier Device Package
TO-82
Base Product Number
2N1016
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1086-16070-ND
1086-16070-MIL
150-JAN2N1016B
1086-16070
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation JAN2N1016B
Documents & Media
Environmental Information
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Quantity Price
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Substitutes
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