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Part Number Overview
Manufacturer Part Number
TPD3215M
Description
GANFET 2N-CH 600V 70A MODULE
Detailed Description
Mosfet Array 600V 70A (Tc) 470W Through Hole Module
Manufacturer
Transphorm
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Transphorm
Series
-
Package
Bulk
Product Status
Obsolete
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
Power - Max
470W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
Module
Supplier Device Package
Module
Base Product Number
TPD3215
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TPH3215M
TPH3215M-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Transphorm TPD3215M
Documents & Media
Datasheets
1(TPD3215M)
Product Training Modules
1(GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies)
Video File
()
PCN Obsolescence/ EOL
1(Mult Devices EOL 02/Apr/2018)
HTML Datasheet
1(TPD3215M)
Quantity Price
-
Substitutes
-