China
Spain
Rusia
Italy
GermanyIRF120
Part Number Overview
Manufacturer Part Number
IRF120
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 100 V 8A (Tc) 40W (Tc) Through Hole TO-3
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
151
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3
Package / Case
TO-204AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
HARHARIRF120
2156-IRF120
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRF120
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 151
Unit Price: $2
Packaging: Bulk
MinMultiplier: 151
Packaging: Bulk
MinMultiplier: 151
Substitutes
-