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Part Number Overview
Manufacturer Part Number
FQU10N20TU
Description
MOSFET N-CH 200V 7.6A IPAK
Detailed Description
N-Channel 200 V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Through Hole IPAK
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
606
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 51W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQU10N20TU-FS
FAIFSCFQU10N20TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQU10N20TU
Documents & Media
Datasheets
1(FQU10N20TU)
Quantity Price
Quantity: 606
Unit Price: $0.5
Packaging: Tube
MinMultiplier: 606
Packaging: Tube
MinMultiplier: 606
Substitutes
-