China
Spain
Rusia
Italy
GermanyRP1E090XNTCR
Part Number Overview
Manufacturer Part Number
RP1E090XNTCR
Description
MOSFET N-CH 30V 9A MPT6
Detailed Description
N-Channel 30 V 9A (Ta) 2W (Ta) Surface Mount MPT6
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MPT6
Package / Case
6-SMD, Flat Leads
Base Product Number
RP1E090
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
RP1E090XNTCRCT
RP1E090XNTCRDKR
RP1E090XNTCRTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor RP1E090XNTCR
Documents & Media
Datasheets
1(RP1E090XN)
Quantity Price
-
Substitutes
-