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Part Number Overview
Manufacturer Part Number
FDD2612
Description
MOSFET N-CH 200V 4.9A TO252
Detailed Description
N-Channel 200 V 4.9A (Ta) 42W (Ta) Surface Mount TO-252 (DPAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
360
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
720mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
234 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
42W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FDD2612-FSTR
FAIFSCFDD2612
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD2612
Documents & Media
Datasheets
1(FDD2612)
Quantity Price
Quantity: 360
Unit Price: $0.83
Packaging: Bulk
MinMultiplier: 360
Packaging: Bulk
MinMultiplier: 360
Substitutes
-