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Part Number Overview
Manufacturer Part Number
PDTA113EMB,315
Description
TRANS PREBIAS PNP 50V 0.1A 3DFN
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
11,181
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
180 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006B-3
Base Product Number
PDTA113
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPPDTA113EMB,315
2156-PDTA113EMB,315
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTA113EMB,315
Documents & Media
Datasheets
1(PDTA113EMB,315 Datasheet)
Quantity Price
Quantity: 11181
Unit Price: $0.03
Packaging: Bulk
MinMultiplier: 11181
Packaging: Bulk
MinMultiplier: 11181
Substitutes
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